The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2011
Filed:
Dec. 06, 2007
Katsunori Makihara, Higashihiroshima, JP;
Seiichi Miyazaki, Higashihiroshima, JP;
Seiichiro Higashi, Higashihiroshima, JP;
Katsunori Makihara, Higashihiroshima, JP;
Seiichi Miyazaki, Higashihiroshima, JP;
Seiichiro Higashi, Higashihiroshima, JP;
Hiroshima University, Hiroshima, JP;
Abstract
A semiconductor memory includes a composite floating structure where an insulation film is formed on a semiconductor substrate, Si-based quantum dots covered with an extremely thin Si oxide film is formed on the insulation film, silicide quantum dots covered with a high dielectric insulation film are formed on the extremely thin Si oxide film, and Si-based quantum dots covered with a high dielectric insulation film are formed on the high dielectric insulation film. Multivalued memory operations can be conducted at a high speed and with stability by applying a certain positive voltage to a gate electrode to accumulate electrons in the silicide quantum dots and by applying a certain negative voltage and weak light to the gate electrode to emit the electrons from the silicide quantum dots.