The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2010
Filed:
Jul. 31, 2008
Katsunori Makihara, Higashihiroshima, JP;
Seiichi Miyazaki, Higashihiroshima, JP;
Seiichiro Higashi, Higashihiroshima, JP;
Katsunori Makihara, Higashihiroshima, JP;
Seiichi Miyazaki, Higashihiroshima, JP;
Seiichiro Higashi, Higashihiroshima, JP;
Hiroshima University, Hiroshima, JP;
Abstract
A measuring unit applies a dc voltage causing an inversion layer to be formed on an interface between a semiconductor substrate and an insulating film to the semiconductor substrate while changing a change speed of a level of the dc voltage, and measures a current flowing through the insulating film. An arithmetic unit obtains a straight line showing a relationship between the current flowing through the insulating film and the change speed of the dc voltage on the basis of a relationship between the current measured by the measuring unit and the dc voltage, and calculates a slope of the obtained straight line as surface capacitance of the insulating film. The arithmetic unit calculates permittivity of the insulating film on the basis of the calculated surface capacitance, an area of contact between a probe and the insulating film and a thickness of the insulating film.