The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2014
Filed:
Dec. 06, 2007
Katsunori Makihara, Higashihiroshima, JP;
Seiichi Miyazaki, Higashihiroshima, JP;
Seiichiro Higashi, Higashihiroshima, JP;
Hideki Murakami, Higashihiroshima, JP;
Katsunori Makihara, Higashihiroshima, JP;
Seiichi Miyazaki, Higashihiroshima, JP;
Seiichiro Higashi, Higashihiroshima, JP;
Hideki Murakami, Higashihiroshima, JP;
Hiroshima University, Higashihiroshima-Shi, Hiroshima, JP;
Abstract
A semiconductor device has a floating gate structure in which charge storage layers are stacked on a SiOlayer formed on a substrate made of n-type Si. The charge storage layer has quantum dots made of undoped Si and an oxide layer that covers the quantum dots. The charge storage layer has quantum dots made of n-Si and an oxide layer that covers the quantum dots. Electrons originally existing in the quantum dots migrate between the quantum dots and the quantum dots via tunnel junction and are distributed in the quantum dots and/or the quantum dots according to the voltage applied to a gate electrode via pads. The distribution is detected in the form of a current (I).