The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 03, 2010

Filed:

Sep. 17, 2008
Applicants:

Katsunori Makihara, Hiroshima, JP;

Seiichi Miyazaki, Hiroshima, JP;

Seiichiro Higashi, Hiroshima, JP;

Inventors:

Katsunori Makihara, Hiroshima, JP;

Seiichi Miyazaki, Hiroshima, JP;

Seiichiro Higashi, Hiroshima, JP;

Assignee:

Hiroshima University, Higashihiroshima-shi, Hiroshima, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A light-emitting device comprises first and second dot members. The first dot member is formed so that it makes contact with the second dot member. The first dot member comprises a plurality of first quantum dot layers. Each of the plurality of first quantum dot layers comprises a plurality of first quantum dots and a silicon dioxide film. The first quantum dot comprises an n-type silicon dot. The second dot member comprises a plurality of second quantum dot layers. Each of the plurality of second quantum dot layers comprises a plurality of second quantum dots and a silicon dioxide film. The second quantum dot comprises a p-type silicon dot.


Find Patent Forward Citations

Loading…