Miyagi, Japan

Satoshi Ohuchida

USPTO Granted Patents = 5 

Average Co-Inventor Count = 4.1

ph-index = 1


Company Filing History:


Years Active: 2021-2025

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5 patents (USPTO):

Title: Satoshi Ohuchida: Innovator in Plasma Processing Technology

Introduction

Satoshi Ohuchida is a prominent inventor based in Miyagi, Japan, known for his contributions to plasma processing technology. With a total of 5 patents to his name, he has made significant advancements in methods and systems that enhance the efficiency of plasma processing.

Latest Patents

Ohuchida's latest patents include a plasma processing method and a plasma processing system. The plasma processing method involves a chamber where a substrate with a film stack, including silicon oxide and silicon nitride films, is processed. This method entails forming plasma from a processing gas that contains HF gas and other components to etch the film stack while maintaining specific temperature and bias signal conditions. Another notable patent is an etching method that protects a mask during plasma etching of a silicon-containing film. This method utilizes a process gas containing halogen and phosphorus to create a carbon-phosphorus bond on the mask's surface.

Career Highlights

Satoshi Ohuchida is currently employed at Tokyo Electron Limited, a leading company in the semiconductor manufacturing equipment industry. His work focuses on developing innovative plasma processing techniques that are crucial for the production of advanced semiconductor devices.

Collaborations

Ohuchida has collaborated with notable colleagues, including Maju Tomura and Yoshihide Kihara, contributing to the advancement of plasma processing technologies through teamwork and shared expertise.

Conclusion

Satoshi Ohuchida's innovative work in plasma processing technology has positioned him as a key figure in the field. His patents reflect a commitment to enhancing semiconductor manufacturing processes, showcasing his significant impact on the industry.

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