The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2025
Filed:
Jun. 29, 2022
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Takahiro Yokoyama, Miyagi, JP;
Maju Tomura, Miyagi, JP;
Yoshihide Kihara, Miyagi, JP;
Satoshi Ohuchida, Miyagi, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01J 37/20 (2006.01); H01J 37/32 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01J 37/20 (2013.01); H01J 37/32082 (2013.01); H01J 37/32449 (2013.01); H01L 21/3065 (2013.01); H01L 21/31144 (2013.01); H01J 2237/334 (2013.01);
Abstract
A technique protects a mask in plasma etching of a silicon-containing film. An etching method includes providing a substrate in a chamber included in a plasma processing apparatus. The substrate includes a silicon-containing film and a mask. The mask contains carbon. The etching method further includes etching the silicon-containing film with a chemical species in plasma generated from a process gas in the chamber. The process gas contains a halogen and phosphorus. The etching includes forming a carbon-phosphorus bond on a surface of the mask.