The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2026
Filed:
Apr. 28, 2023
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Maju Tomura, Miyagi, JP;
Takatoshi Orui, Hillsboro, OR (US);
Kae Kumagai, Miyagi, JP;
Ryutaro Suda, Miyagi, JP;
Satoshi Ohuchida, Miyagi, JP;
Yusuke Wako, Miyagi, JP;
Yoshihide Kihara, Miyagi, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 50/28 (2026.01); H01J 37/32 (2006.01); H10P 50/00 (2026.01); H10P 50/26 (2026.01); H10P 76/40 (2026.01);
U.S. Cl.
CPC ...
H10P 50/283 (2026.01); H01J 37/32449 (2013.01); H10P 50/268 (2026.01); H10P 50/71 (2026.01); H10P 50/73 (2026.01); H10P 76/405 (2026.01); H01J 2237/3341 (2013.01);
Abstract
An etching method includes (a) providing a substrate in a chamber in a plasma processing apparatus. The substrate includes a silicon-containing film. The etching method further includes (b) etching the silicon-containing film with a chemical species in plasma generated from a process gas in the chamber. The process gas contains a hydrogen fluoride gas and a phosphorus-containing gas.