The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2023

Filed:

Jan. 25, 2022
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Satoshi Ohuchida, Miyagi, JP;

Koki Mukaiyama, Miyagi, JP;

Yusuke Wako, Miyagi, JP;

Maju Tomura, Miyagi, JP;

Yoshihide Kihara, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); B08B 5/00 (2006.01); B08B 13/00 (2006.01); B08B 3/08 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32724 (2013.01); B08B 3/08 (2013.01); B08B 5/00 (2013.01); B08B 13/00 (2013.01); H01L 21/0206 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01); H01J 2237/334 (2013.01);
Abstract

A substrate processing method includes: (a) disposing a substrate on a substrate support provided in a chamber of a substrate processing apparatus; (b) supplying a processing gas including hydrogen fluoride gas into the chamber; (c) controlling a temperature of the substrate support to a first temperature, and a pressure of the hydrogen fluoride gas in the chamber to a first pressure; and (d) controlling the temperature of the substrate support to a second temperature, and the pressure of the hydrogen fluoride gas in the chamber to a second pressure. In a graph with a horizontal axis indicating a temperature and a vertical axis indicating a pressure, the first temperature and the first pressure are positioned in a first region above an adsorption equilibrium pressure curve of hydrogen fluoride, and the second temperature and the second pressure are positioned in a second region below the adsorption equilibrium pressure curve.


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