logo

For the Inventor, By the Inventor

Yorktown Heights, NY, United States of America

SangBum Kim

USPTO Granted Patents = 24 

Average Co-Inventor Count = 3.0

ph-index = 6

Forward Citations = 87(Granted Patents)


Location History:

  • Stamford, CT (US) (2014 - 2015)
  • Yorktown Heights, NY (US) (2015 - 2020)
  • Suwanee, GA (US) (2020 - 2023)

Company Filing History:

goldMedal22 out of 164,197 
 
International Business Machines Corporation
 patents
silverMedal2 out of 3,602 
 
Macronix International Co., Ltd.
 patents
bronzeMedal1 out of 5,671 
 
Globalfoundries Inc.
 patents
4. 1 out of 131,611 
 
Samsung Electronics Co., Ltd.
 patents
where one patent can have more than one assignee

Years Active: 2014-2023

Loading Chart...
24 patents (USPTO):Explore Patents
1. 11557343 - Pulsing synaptic devices based on phase-change memory to increase the linearity in weight update (2023-01-17),
2. 11355706 - Single-sided liner PCM cell for 3D crossbar PCM memory (2022-06-07),
3. 10810489 - Neuron peripheral circuits for neuromorphic synaptic memory array based on neuron models (2020-10-20),
4. 10713562 - Neuromorphic memory circuit (2020-07-14),
5. 10707417 - Single-sided liner PCM cell for 3D crossbar PCM memory (2020-07-07),
6. 10572799 - Neuron peripheral circuits for neuromorphic synaptic memory array based on neuron models (2020-02-25),
7. 10528865 - System to duplicate neuromorphic core functionality (2020-01-07),
8. 10417559 - Communicating postsynaptic neuron fires to neuromorphic cores (2019-09-17),
9. 10169701 - Neuron peripheral circuits for neuromorphic synaptic memory array based on neuron models (2019-01-01),
10. 10056546 - Metal nitride keyhole or spacer phase change memory cell structures (2018-08-21),
11. 9882126 - Phase change storage device with multiple serially connected storage regions (2018-01-30),
12. 9830982 - Neuromorphic memory circuit using a dendrite leaky integrate and fire (LIF) charge (2017-11-28),
13. 9830981 - Neuromorphic memory circuit using a leaky integrate and fire (LIF) line to transmit axon LIF pulse and a conductive denrite LIF line (2017-11-28),
14. 9627612 - Metal nitride keyhole or spacer phase change memory cell structures (2017-04-18),
15. 9263336 - Symmetrical bipolar junction transistor array (2016-02-16),

Title: The Innovative Journey of SangBum Kim

Introduction: SangBum Kim, a talented inventor based in Yorktown Heights, NY, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: SangBum Kim holds several patents in the areas of artificial intelligence, machine learning, and robotics, showcasing his expertise in cutting-edge technologies.

Career Highlights: With a background in computer science and engineering, SangBum Kim has worked for top tech companies, leading research institutions, and universities, where he has spearheaded projects that have revolutionized the industry.

Collaborations: Throughout his career, SangBum Kim has collaborated with renowned scientists, engineers, and researchers from around the world, fostering a culture of innovation and knowledge sharing.

Conclusion: SangBum Kim's passion for pushing the boundaries of technology and his relentless pursuit of excellence continue to inspire the next generation of inventors and innovators.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…