logo

For the Inventor, By the Inventor

Yorktown Heights, NY, United States of America

SangBum Kim

This inventor holds 24 USPTO granted patents and 2 published patent applications, primarily in Neuromorphic Memory. Top assignees: International Business Machines Corporation, Macronix International Co., Ltd., Globalfoundries Inc.. Active years: 2014-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: SangBum Kim. Retrieved from https://idiyas.com/inventor/sangbum-kim-6u2lv4nd

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 24 

% Patents Active = 75.0

Average Co-Inventor Count = 3.0

ph-index = 6

Forward Citations = 87(Granted Patents)


Location History:

  • Stamford, CT (US) (2014 - 2015)
  • Yorktown Heights, NY (US) (2015 - 2020)
  • Suwanee, GA (US) (2020 - 2023)

Company Filing History:

goldMedal22 out of 166,409 
 
International Business Machines Corporation
 patents
silverMedal2 out of 3,609 
 
Macronix International Co., Ltd.
 patents
bronzeMedal1 out of 5,671 
 
Globalfoundries Inc.
 patents
4. 1 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents
where one patent can have more than one assignee

Years Active: 2014-2023

Loading Chart...
Areas of Expertise:
Phase-Change Memory
Neuromorphic Memory
Synaptic Devices
Neuron Circuits
3D Memory Arrays
Leaky Integrate and Fire
High-Endurance Devices
Memory State Sensing
Resistive Memory
Memory Buffer
Bipolar Junction Transistor
24 patents (USPTO):Explore Patents
1. 11557343 - Pulsing synaptic devices based on phase-change memory to increase the linearity in weight update (2023-01-17),
2. 11355706 - Single-sided liner PCM cell for 3D crossbar PCM memory (2022-06-07),
3. 10810489 - Neuron peripheral circuits for neuromorphic synaptic memory array based on neuron models (2020-10-20),
4. 10713562 - Neuromorphic memory circuit (2020-07-14),
5. 10707417 - Single-sided liner PCM cell for 3D crossbar PCM memory (2020-07-07),
6. 10572799 - Neuron peripheral circuits for neuromorphic synaptic memory array based on neuron models (2020-02-25),
7. 10528865 - System to duplicate neuromorphic core functionality (2020-01-07),
8. 10417559 - Communicating postsynaptic neuron fires to neuromorphic cores (2019-09-17),
9. 10169701 - Neuron peripheral circuits for neuromorphic synaptic memory array based on neuron models (2019-01-01),
10. 10056546 - Metal nitride keyhole or spacer phase change memory cell structures (2018-08-21),
11. 9882126 - Phase change storage device with multiple serially connected storage regions (2018-01-30),
12. 9830982 - Neuromorphic memory circuit using a dendrite leaky integrate and fire (LIF) charge (2017-11-28),
13. 9830981 - Neuromorphic memory circuit using a leaky integrate and fire (LIF) line to transmit axon LIF pulse and a conductive denrite LIF line (2017-11-28),
14. 9627612 - Metal nitride keyhole or spacer phase change memory cell structures (2017-04-18),
15. 9263336 - Symmetrical bipolar junction transistor array (2016-02-16),

Title: The Innovative Journey of SangBum Kim

Introduction: SangBum Kim, a talented inventor based in Yorktown Heights, NY, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: SangBum Kim holds several patents in the areas of artificial intelligence, machine learning, and robotics, showcasing his expertise in cutting-edge technologies.

Career Highlights: With a background in computer science and engineering, SangBum Kim has worked for top tech companies, leading research institutions, and universities, where he has spearheaded projects that have revolutionized the industry.

Collaborations: Throughout his career, SangBum Kim has collaborated with renowned scientists, engineers, and researchers from around the world, fostering a culture of innovation and knowledge sharing.

Conclusion: SangBum Kim's passion for pushing the boundaries of technology and his relentless pursuit of excellence continue to inspire the next generation of inventors and innovators.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…