The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2016
Filed:
May. 28, 2014
International Business Machines Corporation, Armonk, NY (US);
Matthew J. BrightSky, Pound Ridge, NY (US);
Jin Cai, Cortlandt Manor, NY (US);
SangBum Kim, Yorktown Heights, NY (US);
Chung H. Lam, Peekskill, NY (US);
Tak H. Ning, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of manufacturing a bipolar junction transistor (BJT) array may include forming a substrate of doped silicon and forming a plurality of BJTs on the substrate. Each of the BJTs may have a first region and a second region sandwiching a base region vertically. The first region may be in contact with the substrate, where the BJTs are formed in a first row and a second row. The first row and the second row may each have BJTs separated from one another by a word line distance and the first row and second row may be separated by a bit line distance. A plurality of word line contacts may be formed laterally enclosing and electrically connected to each base region of the BJTs. The word line contacts may have a lateral thickness more than one half the word line distance and less than one half the bit line distance.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile