The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2020

Filed:

Nov. 12, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Kohji Hosokawa, Shiga-ken, JP;

Masatoshi Ishii, Shiga-ken, JP;

SangBum Kim, Yorktown Heights, NY (US);

Chung H. Lam, Peekskill, NY (US);

Scott C. Lewis, Eastham, MA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06N 3/06 (2006.01); G06N 3/063 (2006.01); G06N 3/04 (2006.01);
U.S. Cl.
CPC ...
G06N 3/0635 (2013.01); G06N 3/049 (2013.01);
Abstract

A neuromorphic memory system including neuromorphic memory arrays. The neuromorphic memory system includes a presynaptic neuron circuit coupled to a postsynaptic neuron circuit by a resistive memory cell. The method includes generating a presynaptic LIF pulse on a presynaptic LIF line at time t. An activating operation activates an access transistor coupled to the presynaptic LIF line in response to the presynaptic LIF pulse. The access transistor enables LIF current to pass through the resistive memory cell to a postsynaptic LIF line. An integrating operation integrates the LIF current at the postsynaptic LIF line over time. A comparing operation compares a LIF voltage at the postsynaptic LIF line to a threshold voltage. A generating operation generates a postsynaptic spike timing dependent plasticity (STDP) pulse on a postsynaptic STDP line if the LIF voltage is beyond the threshold voltage.


Find Patent Forward Citations

Loading…