The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2020

Filed:

Jun. 18, 2016
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

SangBum Kim, Yorktown Heights, NY (US);

Chung H. Lam, Peekskill, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06N 3/063 (2006.01); G06N 3/04 (2006.01); G06N 3/08 (2006.01);
U.S. Cl.
CPC ...
G06N 3/0635 (2013.01); G06N 3/049 (2013.01); G06N 3/04 (2013.01); G06N 3/084 (2013.01);
Abstract

A neuromorphic memory circuit including a programmable resistive memory element, an axon LIF pulse generator to generate an axon LIF pulse, a back propagation pulse generator to generate a back propagation pulse, a postsynaptic capacitor configured to build up a forward propagation LIF charge over time, and a presynaptic capacitor configured to build up a back propagation LIF charge over time. A first transistor activates a first discharge path from the postsynaptic capacitor through the programmable resistive memory element when the axon LIF pulse generator generates the axon LIF pulse. A second transistor activates a second discharge path from the presynaptic capacitor through the programmable resistive memory element when the back propagation pulse generator generates the back propagation pulse.


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