Suwon, South Korea

Sang-Hyun Joo

This inventor holds 35 USPTO granted patents and 1 published patent application and 1 EPO patent, primarily in Nonvolatile Memory Devices. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2013-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sang-Hyun Joo. Retrieved from https://idiyas.com/inventor/sang-hyun-joo

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 35 

% Patents Active = 85.7

 

Average Co-Inventor Count = 2.2

ph-index = 5

Forward Citations = 151(Granted Patents)


Location History:

  • Hwaseongi-Si, KR (2015)
  • Hwaseong-si, KR (2013 - 2016)
  • Suwon-si, KR (2017 - 2024)

Company Filing History:


Years Active: 2013-2026

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Areas of Expertise:
Nonvolatile Memory
GIDL Erase
ECC Control
Flash Memory
Memory System
Programming Method
Threshold Voltage
Data Storage
Bad Block Testing
Page Buffer
Three-Dimensional Memory
Operation Method
35 patents (USPTO):Explore Patents

Title: **The Innovative Contributions of Sang-Hyun Joo in Non-Volatile Memory Technology**

Introduction

Sang-Hyun Joo is a prominent inventor based in Suwon-si, South Korea, recognized for his significant contributions to the field of non-volatile memory devices. With a remarkable portfolio of 34 patents, Joo has greatly advanced the technology that underpins modern memory solutions. His work is highly influential in the development of efficient and reliable memory devices used in various electronic applications.

Latest Patents

Among Joo's latest innovations is a **non-volatile memory device and a method for operating the same**. This invention features a control logic circuit designed to generate necessary program and erase signals. It includes a voltage generator that produces both program and erase voltages, coupled with a sophisticated memory cell array comprising a memory cell, a string select transistor, and a page buffer circuit. The intricate design of the first precharge transistor allows it to apply the appropriate voltages to the bit-line based on the generated signals. Another notable patent involves an **operation method of a nonvolatile memory device**, detailing a series of programmed and verified steps that optimize the timing and voltage adjustments during memory operations.

Career Highlights

Sang-Hyun Joo has been associated with esteemed organizations such as **Samsung Electronics Co., Ltd.** and **Samsung Electronics Co., Ltd.**. His work within these companies has not only contributed to their product developments but has also established him as a key figure in the research and development of memory technologies.

Collaborations

Throughout his career, Joo has collaborated with talented individuals like Myoung-Won Yoon and Kitae Park. These partnerships have fostered an environment of innovation, enabling the development of cutting-edge technologies in the field of electronics.

Conclusion

Sang-Hyun Joo stands out as a leading inventor in the realm of non-volatile memory technologies. His extensive patent portfolio and collaborative efforts demonstrate his commitment to advancing memory solutions that meet the demands of modern technology. As non-volatile memory devices continue to evolve, Joo’s contributions will undoubtedly play a pivotal role in shaping the future of this critical sector.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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