The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 31, 2022

Filed:

Sep. 02, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Myoung-Won Yoon, Suwon-si, KR;

Sang-Hyun Joo, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/14 (2006.01); G11C 16/08 (2006.01); G11C 16/04 (2006.01); G11C 29/38 (2006.01); G11C 7/22 (2006.01);
U.S. Cl.
CPC ...
G11C 29/14 (2013.01); G11C 7/22 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 29/38 (2013.01);
Abstract

A test system includes a non-volatile memory device that includes a plurality of memory blocks operating in a multi-plane mode, and a test machine that detects a bad block of the non-volatile memory device. The non-volatile memory device generates a ready/busy signal which is based on whether an erase loop for detection of the bad block progresses. When at least one normal block is detected from the plurality of memory blocks included in planes operating in the multi-plane mode, the non-volatile memory device generates the ready/busy signal having a first busy interval. When all the memory blocks included in the planes operating in the multi-plane mode are detected as bad blocks, the non-volatile memory device generates the ready/busy signal having a second busy interval shorter than the first busy interval.


Find Patent Forward Citations

Loading…