The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 23, 2019

Filed:

Jun. 01, 2017
Applicants:

Yoon-hee Choi, Hwaseong-si, KR;

Sungyeon Lee, Seoul, KR;

Sang-hyun Joo, Suwon-si, KR;

Inventors:

Yoon-Hee Choi, Hwaseong-si, KR;

Sungyeon Lee, Seoul, KR;

Sang-Hyun Joo, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/10 (2006.01); G11C 16/34 (2006.01); G11C 16/04 (2006.01); G11C 11/56 (2006.01); G11C 7/04 (2006.01); G11C 16/08 (2006.01); G11C 16/30 (2006.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G11C 7/04 (2013.01); G11C 11/5628 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/3459 (2013.01); G11C 16/30 (2013.01); G11C 2211/5621 (2013.01);
Abstract

In a method of programming a three-dimensional nonvolatile memory device, a program loop is executed at least one time. The program loop includes a programming step for programming selected memory cells among memory cells and a verifying step for verifying whether the selected memory cells are program-passed or not. In programming the selected memory cells, a level of a voltage being applied to a common source line connected to the memory cells in common may be changed. Thus, in a program operation, power consumption which is needed to charge-discharge the common source line can be decreased while increasing boosting efficiency.


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