The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2024
Filed:
Jul. 31, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jun-Ho Seo, Hwaseong-si, KR;
Juwon Lee, Hwaseong-si, KR;
Suk-Eun Kang, Seoul, KR;
Dogyeong Lee, Suwon-si, KR;
Youngwook Jeong, Seoul, KR;
Sang-Hyun Joo, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si Gyeonggi-do, KR;
Abstract
An operation method of a nonvolatile memory device includes performing a 1-stage program step and a 1-stage verify step on a first word line, storing a first time stamp, performing the 1-stage program step and the 1-stage verify step on a second word line, storing a second time stamp, calculating a delay time based on the first time stamp and the second time stamp, determining whether the delay time is greater than a threshold value, adjusting at least one 2-stage verify voltage associated with the first word line from a first voltage level to a second voltage level based on the delay time, and performing a 2-stage program step and a 2-stage verify step on the first word line. A level of the at least one 1-stage verify voltage is lower than the second voltage level, and the second voltage level is lower than the first voltage level.