The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2023

Filed:

Jan. 20, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Myoung-Won Yoon, Suwon-si, KR;

Sang-Hyun Joo, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/14 (2006.01); G11C 16/34 (2006.01); G11C 16/04 (2006.01); G11C 16/16 (2006.01); G11C 16/28 (2006.01); G11C 16/10 (2006.01);
U.S. Cl.
CPC ...
G11C 16/349 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/16 (2013.01); G11C 16/28 (2013.01); G11C 16/3445 (2013.01);
Abstract

A nonvolatile memory device includes a memory block with an unused line connected to dummy cells and used lines connected to normal cells, and a controller which applies an erase voltage to the memory block, applies an unused line erase voltage to the unused line, and applies a word line erase voltage to the used lines during an erase operation. The dummy cells are not programmed during a program operation while the normal cells are programmed, the unused line erase voltage transits from a first voltage to a floating voltage at a first time point, and the controller reads the dummy cells and controls at least one of the magnitude of the first voltage and the first time point based on the result of reading the dummy cells.


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