San-Jung Chang

Title: San-Jung Chang: Innovator in Semiconductor Technology

Introduction

San-Jung Chang is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 7 patents. His work focuses on innovative structures and manufacturing methods that enhance the performance and efficiency of semiconductor devices.

Latest Patents

Among his latest patents is a semiconductor structure and manufacturing method that includes a substrate, a first isolation structure, and a capacitor. This invention provides a detailed design where the substrate contains a capacitor region, and the first isolation structure is strategically placed within this region. The capacitor itself comprises the substrate, an electrode layer, and a first dielectric layer, ensuring optimal functionality.

Another notable patent is related to dynamic random access memory (DRAM). This invention outlines a DRAM structure that includes a substrate, multiple word-line sets, bit-line structures, capacitors, and air gaps. The design allows for efficient data storage and retrieval, showcasing Chang's expertise in semiconductor memory technology.

Career Highlights

San-Jung Chang has worked with several notable companies throughout his career, including Mosel Vitelic Corporation and Promos Technologies, Inc. His experience in these organizations has contributed to his deep understanding of semiconductor manufacturing processes and innovations.

Collaborations

Throughout his career, Chang has collaborated with talented individuals such as Min-Liang Chen and Chih-Hsien Wang. These partnerships have fostered a creative environment that has led to groundbreaking advancements in semiconductor technology.

Conclusion

San-Jung Chang's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the field. His innovative approaches continue to influence the development of advanced electronic devices.