The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2026

Filed:

Mar. 02, 2023
Applicant:

Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;

Inventors:

Li-Peng Chang, Hsinchu City, TW;

Chih-Ling Hung, Hsinchu County, TW;

San-Jung Chang, Hsinchu City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 1/68 (2025.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H10D 1/692 (2025.01); H01L 21/76898 (2013.01);
Abstract

The present invention provides a silicon capacitor structure, including a substrate, an interlayer dielectric (ILD) layer on the substrate, a capacitor recess extending from a surface of the ILD layer into the substrate, a capacitor in the capacitor recess, wherein the capacitor includes a bottom electrode on a surface of the capacitor recess, a capacitive dielectric layer on a surface of the bottom electrode, and a top electrode on a surface of the capacitive dielectric layer and filling up the capacitor recess.


Find Patent Forward Citations

Loading…