Portland, OR, United States of America

Sairam Subramanian

This inventor holds 20 USPTO granted patents and 16 published patent applications, primarily in Integrated Circuit Technology. Top assignee: Intel Corporation. Active years: 2021-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sairam Subramanian. Retrieved from https://idiyas.com/inventor/sairam-subramanian

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 20 

% Patents Active = 85.0

Average Co-Inventor Count = 3.4

ph-index = 2

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2021-2026

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Areas of Expertise:
Gate-All-Around
Integrated Circuit
Self-Aligned Architecture
Electrical Fails Detection
Trench Connectors
Epitaxial Source
Dual Architectures
Device Interconnects
Endcap Plugs
Voltage Contrast
Dummy Gate
Non-Merged Regions
20 patents (USPTO):Explore Patents

Title: Innovations of Sairam Subramanian

Introduction

Sairam Subramanian is a prominent inventor based in Portland, OR (US). He has made significant contributions to the field of integrated circuit structures, holding a total of 16 patents. His work focuses on advancing semiconductor technology, which is crucial for modern electronics.

Latest Patents

Among his latest patents are "Adjacent gate-all-around integrated circuit structures having non-merged epitaxial source or drain regions." This patent describes an integrated circuit structure that includes a first vertical arrangement of nanowires and a second vertical arrangement of nanowires above a substrate. The design features one or more gate stacks positioned over these vertical arrangements. Additionally, first and second epitaxial source or drain structures are located at the ends of the respective vertical arrangements. An intervening dielectric structure is strategically placed between adjacent epitaxial source or drain structures. Another notable patent is for "Self-aligned gate endcap (SAGE) architecture having gate contacts." This invention includes a gate structure over a semiconductor fin, with a gate endcap isolation structure in contact with the gate structure. A trench contact structure is also present, ensuring effective electrical connectivity.

Career Highlights

Sairam Subramanian is currently employed at Intel Corporation, where he continues to innovate in the semiconductor industry. His work has been instrumental in developing advanced technologies that enhance the performance and efficiency of integrated circuits.

Collaborations

He has collaborated with notable coworkers such as Walid M Hafez and Chia-Hong Jan, contributing to various projects that push the boundaries of semiconductor technology.

Conclusion

Sairam Subramanian's contributions to the field of integrated circuits are significant and impactful. His innovative patents and work at Intel Corporation highlight his role as a leading inventor in the semiconductor industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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