Tsukuba, Japan

Sadanori Yamanaka

This inventor holds 17 USPTO granted patents, primarily in Semiconductor Technology. Top assignees: Sumitomo Chemical Company, Limited, National Institute of Advanced Industrial Science and Technology, The University of Tokyo. Active years: 2006-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sadanori Yamanaka. Retrieved from https://idiyas.com/inventor/sadanori-yamanaka

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 11.8

Average Co-Inventor Count = 3.3

ph-index = 3

Forward Citations = 33(Granted Patents)


Location History:

  • Tsukuba, JP (2006 - 2014)
  • Chiba, JP (2013 - 2014)
  • Tokyo, JP (2014)
  • Ibaraki, JP (2011 - 2017)

Company Filing History:


Years Active: 2006-2017

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Areas of Expertise:
Semiconductor Wafer
Electronic Device
Heterojunction Bipolar Transistor
Light-Emitting Device
Epitaxial Substrate
GaN Based Luminescent Device
Sensor
Optical Device
Group 3-5 Nitride Semiconductor
Manufacturing Method
Semiconductor Substrate
Lattice Matched Buffer
17 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Sadanori Yamanaka

Introduction

Sadanori Yamanaka, a prominent inventor based in Tsukuba, Japan, has made significant strides in the field of semiconductor technology. With a remarkable portfolio of 17 patents, Yamanaka's work has contributed to advancements in the efficiency and functionality of semiconductor materials and devices.

Latest Patents

Yamanaka's latest patents focus on methodologies and technologies surrounding semiconductor wafers and heterojunction bipolar transistors. One notable patent involves a technique that enhances electrical conductivity in semiconductor crystals like InGaAs, which typically exhibit low doping efficiency for silicon atoms. This innovative method allows for the implantation of a minimal quantity of silicon atoms, resulting in the creation of a semiconductor wafer featuring multiple layers with varying conductivity types and band gaps. The design includes a first semiconductor crystal layer, a second layer with a different conductivity type, a third layer with a wider band gap, and a fourth layer exhibiting a smaller band gap. Each of these layers integrates specific elements to generate corresponding carriers, optimizing the semiconductor's performance.

Another patent details a novel semiconductor wafer comprised of a base wafer, which may predominantly or entirely consist of a silicon crystal plane, along with an inhibitor to regulate crystal growth. This invention incorporates a first crystal layer of SiGe and a second crystal layer of a III-V Group compound semiconductor, facilitating efficient electrical interactions through paired metal layers. Together, these advancements underline Yamanaka’s expertise in pushing the boundaries of semiconductor technology.

Career Highlights

Throughout his career, Sadanori Yamanaka has been associated with notable organizations, including the Sumitomo Chemical Company and the National Institute of Advanced Industrial Science and Technology. His tenure at these institutions has enabled him to pioneer research and development efforts in semiconductor applications, further solidifying his reputation as a leading inventor in his field.

Collaborations

In the course of his innovative journey, Yamanaka has collaborated with esteemed colleagues, including Masahiko Hata and Tomoyuki Takada. These partnerships have facilitated the sharing of knowledge and skills, resulting in impactful contributions to the semiconductor industry.

Conclusion

Sadanori Yamanaka continues to be a pivotal figure in semiconductor innovation, with his extensive patent portfolio reflecting his dedication to advancing technology. His work not only enhances the performance of semiconductor devices but also contributes to the broader field of electronics, underscoring the critical role of inventors like him in shaping the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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