The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2014
Filed:
Sep. 05, 2013
Sumitomo Chemical Company, Limited, Chuo-ku, Tokyo, JP;
National Institute of Advanced Industrial Science and Technology, Chiyoda-ku, Tokyo, JP;
Tomoyuki Takada, Ibaraki, JP;
Sadanori Yamanaka, Ibaraki, JP;
Masao Shimada, Ibaraki, JP;
Masahiko Hata, Ibaraki, JP;
Taro Itatani, Ibaraki, JP;
Hiroyuki Ishii, Ibaraki, JP;
Eiji Kume, Ibaraki, JP;
Abstract
There is provided a semiconductor wafer including a base wafer whose surface is entirely or partially a silicon crystal plane, an inhibitor positioned on the base wafer to inhibit crystal growth and having an opening that reaches the silicon crystal plane, a first crystal layer made of SiGe(0≦x<1) and positioned on the silicon crystal plane that is exposed in the opening, a second crystal layer positioned on the first crystal layer and made of a III-V Group compound semiconductor that has a band gap width larger than a band gap width of the first crystal layer, and a pair of metal layers positioned on the inhibitor and the second crystal layer. The pair of the metal layers are each in contact with the first crystal layer and the second crystal layer.