The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2017
Filed:
Jun. 20, 2016
Sumitomo Chemical Company, Limited, Tokyo, JP;
SUMITOMO CHEMICAL COMPANY, LIMITED, Chuo-ku, Tokyo, JP;
Abstract
Techniques are provided that can impart sufficient electrical conductivity to a semiconductor crystal exhibiting low doping efficiency for silicon atoms, such as InGaAs, by implanting only a small amount of silicon atoms. Such a semiconductor wafer may include a first semiconductor crystal layer, a second semiconductor crystal layer exhibiting a conductivity type that is different from the first layer, a third semiconductor crystal layer exhibiting the conductivity type of the first layer and having a larger band gap than the second semiconductor crystal layer, and a fourth semiconductor crystal layer exhibiting the conductivity type of the first layer and having a smaller band gap than the third semiconductor crystal layer. The fourth semiconductor crystal layer contains a first element that generates a first carrier of a corresponding conductivity type and a second element that generates a second carrier of a corresponding conductivity type.