The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2014
Filed:
Nov. 21, 2011
Applicants:
Sadanori Yamanaka, Chiba, JP;
Masahiko Hata, Ibaraki, JP;
Noboru Fukuhara, Tsukuba, JP;
Inventors:
Assignee:
Sumitomo Chemical Company, Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/70 (2006.01); H01L 29/66 (2006.01); H01L 31/0304 (2006.01); H01L 29/737 (2006.01); H01L 21/02 (2006.01); H01L 31/0312 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7371 (2013.01); H01L 29/66318 (2013.01); H01L 31/03044 (2013.01); H01L 31/0304 (2013.01); H01L 21/0245 (2013.01); H01L 21/02521 (2013.01); H01L 31/0312 (2013.01); H01L 31/1852 (2013.01); H01L 21/02546 (2013.01); H01L 21/02381 (2013.01); Y02E 10/544 (2013.01); H01L 21/0262 (2013.01); H01L 21/02639 (2013.01);
Abstract
There is provided a semiconductor wafer including a base wafer that has an impurity region in which an impurity atom has been introduced into silicon, a plurality of seed bodies provided in contact with the impurity region, and a plurality of compound semiconductors each provided in contact with the corresponding seed bodies and lattice-matched or pseudo-lattice-matched to the corresponding seed bodies. The semiconductor wafer can further include an inhibitor provided on the base wafer and in which a plurality of apertures exposing at least a part of the impurity region are provided.