Company Filing History:
Years Active: 2000-2008
Title: Ryoichi Nakamura: Innovator in Semiconductor Technology
Introduction
Ryoichi Nakamura is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His innovative work has paved the way for advancements in semiconductor devices and manufacturing methods.
Latest Patents
Nakamura's latest patents include a semiconductor device and a method of manufacturing the same. This method involves implanting boron into a surface region of a silicon substrate to create a p-diffused region. It also includes implanting indium into the surface of the p-diffused region to form an indium-implanted layer. Additionally, a contact metal layer is formed on the indium-implanted layer, which reacts with silicon in the substrate to create a titanium silicide layer. Another notable patent is for a hybrid semiconductor device featuring an n+ (p) doped n-type gate. This device utilizes a polysilicon gate electrode structure with multiple Fermi levels, enhancing its functionality in various applications.
Career Highlights
Throughout his career, Ryoichi Nakamura has worked with notable companies, including Elpida Memory, Inc. His expertise in semiconductor technology has been instrumental in the development of advanced electronic components. His innovative approaches have contributed to the evolution of semiconductor devices, making them more efficient and effective.
Collaborations
Nakamura has collaborated with talented individuals in the field, including Ryo Nagai and Satoru Yamada. These collaborations have fostered a creative environment that has led to groundbreaking advancements in semiconductor technology.
Conclusion
Ryoichi Nakamura's contributions to semiconductor technology are noteworthy and impactful. His patents and collaborations reflect his dedication to innovation in this critical field. His work continues to influence the development of advanced electronic devices, solidifying his legacy as a leading inventor.