The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2003
Filed:
Sep. 27, 2001
Applicant:
Inventor:
Ryoichi Nakamura, Tokyo, JP;
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18238 ;
U.S. Cl.
CPC ...
H01L 2/18238 ;
Abstract
A semiconductor device is disclosed including an insulated gate field effect transistor (IGFET) having a gate insulating layer ( ), a gate electrode ( ), and a source-drain layer ( ). The IGFET may include a bird's beak insulating film ( ) in a region in which the gate insulating layer ( ) overlaps the source-drain layer ( ). The bird's beak insulating film ( ) may have a thickness that is greater than the gate insulating film ( ). In this way, inter-band tunneling may be reduced. A plurality of IGFETs may include bird's beak insulating films having different configurations in accordance with operating conditions of the circuit in which the particular IGFET is included.