The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2003
Filed:
Apr. 10, 2002
Ryoichi Nakamura, Tokyo, JP;
Other;
Abstract
It is intended to enable simultaneous formation of concave capacitor storage electrodes and a convex bit contact plug electrode and thereby makes it possible to reduce spaces of margins for alignment errors by decreasing the number of lithography steps. Gate electrodes are formed on a p-well in such a manner that the gate electrode interval in storage electrode forming portions is longer than that in a bit contact plug forming portion, and sidewalls are then formed. An SiO film is deposited, storage electrode forming holes and a bit contact plug forming holes are formed therein, and then a polysilicon film is deposited. Another SiO film is deposited on the polysilicon film and etched back. Then, the polysilicon film is etched back. After etching of the SiO films, capacitor insulating films and counter electrodes are formed and a bit line is also formed.