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For the Inventor, By the Inventor

Taipei, Taiwan

Ryan Hsin-Chin Jiang

This inventor holds 38 USPTO granted patents and 4 published patent applications, primarily in Electrostatic Discharge Protection. Top assignee: Amazing Microelectronic Corporation. Active years: 2009-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ryan Hsin-Chin Jiang. Retrieved from https://idiyas.com/inventor/ryan-hsin-chin-jiang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 38 

% Patents Active = 100.0

Average Co-Inventor Count = 3.2

ph-index = 8

Forward Citations = 171(Granted Patents)


Company Filing History:

goldMedal38 out of 94 
 
Amazing Microelectronic Corporation
 patents

Years Active: 2009-2020

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Areas of Expertise:
Electrical Overstress
Surge Protection
Silicon-Controlled Rectifier
Transient Voltage Suppressor
Electrostatic Discharge
High Voltage
Low Capacitance
Power-Rail Protection
Feedback Control Circuit
Bipolar Transistor
Lateral Suppressor
Asymmetric Rectifier
38 patents (USPTO):Explore Patents
1. 10868421 - On-chip multiple-stage electrical overstress (EOS) protection device (2020-12-15),
2. 10700517 - Active surge protection structure and surge-to-digital converter thereof (2020-06-30),
3. 9929151 - Self-balanced diode device (2018-03-27),
4. 9786653 - Self-balanced diode device (2017-10-10),
5. 9748219 - Self-balanced silicon-controlled rectification device (2017-08-29),
6. 9728530 - Bipolar transistor device (2017-08-08),
7. 9685936 - Self-feedback control circuit (2017-06-20),
8. 9608606 - Slope control circuit (2017-03-28),
9. 9462394 - Splicing type electret loudspeaker (2016-10-04),
10. 9264042 - Serial transmission driving method (2016-02-16),
11. 9153679 - Silicon-controlled rectification device with high efficiency (2015-10-06),
12. 9025289 - Low-cost electrostatic discharge (ESD) protection device for high-voltage open-drain pad (2015-05-05),
13. 9024516 - Method for fabricating a planar micro-tube discharger structure (2015-05-05),
14. 9024354 - Silicon-controlled rectification device with high efficiency (2015-05-05),
15. 8829775 - Planar mirco-tube discharger structure and method for fabricating the same (2014-09-09),

Title: The Innovation Legacy of Ryan Hsin-Chin Jiang

Introduction:

Ryan Hsin-Chin Jiang, a visionary inventor hailing from Taipei, TW, has left an indelible mark on the technology landscape with his relentless pursuit of innovation. With an impressive portfolio of 38 patents, Jiang exemplifies the spirit of creativity and progress, impacting industries far and wide.

Latest Patents:

Among his latest patents is the 'On-chip multiple-stage electrical overstress (EOS) protection device,' a groundbreaking invention designed to safeguard internal circuits from electrical overstress signals. Jiang's 'Active surge protection structure and surge-to-digital converter' is another notable creation, enhancing system stability and providing comprehensive surge protection.

Career Highlights:

Having contributed significantly to the tech realm, Ryan Hsin-Chin Jiang has held key positions at Amazing Microelectronic Corporation and Amazing Microelectronics Corp. His expertise and innovative prowess have propelled these companies towards new heights of success, garnering recognition and respect in the industry.

Collaborations:

Throughout his career, Jiang has collaborated with esteemed professionals such as Ming-Dou Ker and Che-Hao Chuang. Together, they have synergized their talents and knowledge to drive forward cutting-edge technological advancements, setting new standards of excellence in the field.

Conclusion:

In conclusion, Ryan Hsin-Chin Jiang emerges as a trailblazing figure in the realm of innovation, reshaping the technological landscape with his transformative inventions. His dedication to pushing boundaries and creating solutions that enrich lives serves as a testament to his ingenuity and commitment to progress.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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