The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2015
Filed:
Dec. 12, 2013
Amazing Microelectronic Corp., New Taipei, TW;
James Jeng-Jie Peng, Taoyuan County, TW;
Chih-Hao Chen, Taipei, TW;
Ryan Hsin-Chin Jiang, Taipei, TW;
Amazing Microelectronic Corp., New Taipei, TW;
Abstract
A low-cost ESD protection device for high-voltage open-drain pad is disclosed, which has a first high-voltage (HV) NMOSFET coupled to a high-voltage (HV) open drain pad, a ground pad, a HV block unit and an ESD clamp unit and a low-voltage (LV) bias unit coupled to the first HV NMOSFET, a low-voltage (LV) trigger, the ESD clamp unit and the ground pad. The LV trigger is coupled to the HV block unit. The HV block unit blocks a high voltage from the HV open drain pad diode during normal operation and generates a trigger signal to the LV trigger when an ESD event is applied to the HV open drain pad. Then, the LV trigger turns on the ESD clamp unit to discharge an ESD current and switches the LV bias unit to turn off the first HV NMOSFET.