The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2017
Filed:
Dec. 20, 2016
Amazing Microelectronic Corp., New Taipei, TW;
Ming-Dou Ker, Hsinchu County, TW;
Woei-Lin Wu, Hsinchu County, TW;
James Jeng-Jie Peng, Taoyuan County, TW;
Ryan Hsin-Chin Jiang, Taipei, TW;
Amazing Microelectronic Corp., New Taipei, TW;
Abstract
A bipolar transistor device includes a substrate and at least one first transistor unit. The first transistor unit includes a first doped well of first conductivity type, at least one first fin-based structure and at least one second fin-based structure. The first fin-based structure includes a first gate strip and first doped fins arranged in the first doped well, and the first gate strip is floating. The second fin-based structure includes a second gate strip and second doped fins arranged in the first doped well, and the second gate strip is floating. The first doped fins, the second doped fins and the first doped well form first BJTs, and the first doped fins and the second doped fins are respectively coupled to high and low voltage terminals.