Amazing Microelectronic Corporation

Amazing Microelectronics Corp.

Amazing Microelectric Corp.

Ryan Hsin-Chin Jiang

Ming-Dou Ker

Che-Hao Chuang

Kun-Hsien Lin

James Jeng-Jie Peng

Woei-Lin Wu

Tung-Yang Chen

Tang-Kuei Tseng

Chih-Hao Chen

Yuan-Wen Hsiao

Zi-Ping Chen

Chin-Hao Chen

Long-Xi Chang

Wen-Yi Chen

Yu-Shu Shen

Federico Agustin Altolaguirre

Szu-Hsien Wu

Jia-Huei Chen

Juing-Yi Cheng

Hung-Tai Liao

Wen-Chieh Chen

Mou-Ong Sher

Ming-Che Hsieh

An on-chip multiple-stage electrical overstress (EOS) protection device is disclosed. The protection device includes a surge protector having a first clamping voltage and a first electrostatic discharge (ESD) protector having a second clamping voltage lower than the first clamping voltage. The surge protector is electrically connected to the first ESD protector in parallel. The surge protector and the first ESD protector are electrically connected between a receiving terminal and a voltage terminal, and the receiving terminal is electrically connected to an internal circuit. When an electrical overstress (EOS) signal including an electrostatic discharge (ESD) signal and a surge signal appears at the receiving terminal, the first ESD protector and the surge protector are triggered on in turn to clamp a voltage received by the internal circuit.

On-chip multiple-stage electrical overstress (EOS) protection device

An active surge protection structure is provided between a power line and a core circuit, comprising a surge-to-digital converter and a clamp circuit. The surge-to-digital converter comprises a plurality of surge detection circuit. Each surge detection circuit detects a surge event occurring on the power line and generates a digital signal. The clamp circuit is disposed adjacent to the core circuit and electrically connected with the surge-to-digital converter and the power line where the core circuit is connected for dissipating surge energy. The clamp circuit receives and is driven by the digital signals from the surge-to-digital converter such that its protection flexibility can be achieved according to the digital signals. By employing the present invention, it is extraordinarily advantageous of improving system stability and achieving comprehensive surge protection with configuration of driving capability dependent on surge levels.

Active surge protection structure and surge-to-digital converter thereof

A self-balanced diode device includes a substrate, a doped well, at least one first conductivity type heavily doped fin and at least two second conductivity type heavily doped fins. The doped well is arranged in the substrate. The first conductivity type heavily doped fin is arranged in the doped well, arranged in a line along a first direction, and protruded up from a surface of the substrate. The second conductivity type heavily doped fins is arranged in the doped well, arranged in a line along a second direction intersecting the first direction, respectively arranged at two opposite sides of the first conductivity type heavily doped fin, and protruded up from the surface of the substrate. Each second conductivity type heavily doped fin and the first conductivity type heavily doped fin are spaced at a fixed interval.

Self-balanced diode device

A self-balanced silicon-controlled rectification device includes a substrate, an N-type doped well, a P-type doped well, at least one heavily doped clamping fin, at least one first P-type heavily doped fin, and at least one first N-type heavily doped fin. The N-type doped well and the P-type doped well are arranged in the substrate. The heavily doped clamping fin is arranged in the N-type doped well and the P-type well and protruded up from a surface of the substrate. The first P-type heavily doped fin and the first N-type heavily doped fin are respectively arranged in the N-type doped well and the P-type doped well, and protruded up from the surface of the substrate. The abovementioned elements forms silicon-controlled rectifiers (SCRs) are forward biased to generate uniform electrostatic discharge (ESD) currents through the SCRs.

Self-balanced silicon-controlled rectification device

A bipolar transistor device includes a substrate and at least one first transistor unit. The first transistor unit includes a first doped well of first conductivity type, at least one first fin-based structure and at least one second fin-based structure. The first fin-based structure includes a first gate strip and first doped fins arranged in the first doped well, and the first gate strip is floating. The second fin-based structure includes a second gate strip and second doped fins arranged in the first doped well, and the second gate strip is floating. The first doped fins, the second doped fins and the first doped well form first BJTs, and the first doped fins and the second doped fins are respectively coupled to high and low voltage terminals.

Bipolar transistor device

A self-feedback control circuit is connected to a controller area network bus for controlling a high-level output and a low-level output, comprising a controller area network driving circuit and a replica circuit. The replica circuit is connected in parallel with the controller area network driving circuit and comprises an upper feedback path and a lower feedback path. The upper feedback path and the lower feedback path are connected jointly to a common mode, and the replica circuit provides a feedback signal from the common mode such that the feedback signal is able to be respectively transmitted to two individual transistors of the controller area network driving circuit through the upper feedback path and through the lower feedback path so as to control DC level stability of the high-level output and the low-level output.

Self-feedback control circuit

A slope control circuit is connected between a replica circuit and a controller area network bus. The replica circuit generates an upper and a lower feedback signal. The slope control circuit receives and is driven by the feedback signals for controlling a voltage slope of a high-level output and a low-level output. The slope control circuit comprises an upper and a lower driving circuit, individually connected between the replica circuit, the high-level output and the low-level output. The upper driving circuit and the lower driving circuit respectively include at least one charging and discharging circuit. By controlling the charging and discharging circuit, the present invention controls decreasing voltage slope of the high-level output to be symmetric to increasing voltage slope of the low-level output, and delay time of the circuit switching between different operating modes to be equivalent.

Slope control circuit

The present invention discloses a splicing type electret loudspeaker. The splicing type electret loudspeaker may comprise a plurality of electret loudspeaker units. Each electret loudspeaker unit may comprise a plurality of connection ports, and these connection ports may be disposed around the edge of each electret loudspeaker unit. In particular, the connection ports of each electret loudspeaker unit can respectively connect to one of the connection ports of another electret loudspeaker unit; in this way, these electret loudspeaker units can connect to each other in parallel, such that the power input signal and the audio input signal can be transmitted to all electret loudspeaker units to drive them.

Splicing type electret loudspeaker

The present invention discloses a serial transmission driving method, wherein a serial transmission driving device (STD) is connected with a first terminal (FT) and a second terminal (ST) of an equivalent load capacitor through a first differential bus (FDB) and a second differential bus (SDB). FDB and SDB are respectively connected with a high-potential terminal (HPT) and a low-potential terminal (LPT) through a first equivalent resistor and a second equivalent resistor. STD receives a trigger signal (TS) appearing during the transition between a turn-on signal (Ton) and a turn-off signal (Toff), generates a first potential (FP) and a second potential (SP) greater than FP according to TS, and respectively applies FP and SP to SDB and FDB. FP and SP fast change the potential of FT to be greater than that of ST. HPT and LPT maintain potentials of FDB and SDB until Toff ends.

Serial transmission driving method

A silicon-controlled rectification device with high efficiency is disclosed, which comprises a P-type region surrounding an N-type region. A first P-type heavily doped area is arranged in the N-type region and connected with a high-voltage terminal. A plurality of second N-type heavily doped areas is arranged in the N-type region. A plurality of second P-type heavily doped areas is closer to the second N-type heavily doped areas than the first N-type heavily doped area and arranged in the P-type region. At least one third N-type heavily doped area is arranged in the P-type region and connected with a low-voltage terminal. Alternatively or in combination, the second N-type heavily doped areas and the second P-type heavily doped areas are respectively arranged in the P-type region and the N-type region.

Silicon-controlled rectification device with high efficiency

A low-cost ESD protection device for high-voltage open-drain pad is disclosed, which has a first high-voltage (HV) NMOSFET coupled to a high-voltage (HV) open drain pad, a ground pad, a HV block unit and an ESD clamp unit and a low-voltage (LV) bias unit coupled to the first HV NMOSFET, a low-voltage (LV) trigger, the ESD clamp unit and the ground pad. The LV trigger is coupled to the HV block unit. The HV block unit blocks a high voltage from the HV open drain pad diode during normal operation and generates a trigger signal to the LV trigger when an ESD event is applied to the HV open drain pad. Then, the LV trigger turns on the ESD clamp unit to discharge an ESD current and switches the LV bias unit to turn off the first HV NMOSFET.

Low-cost electrostatic discharge (ESD) protection device for high-voltage open-drain pad

A method for fabricating a semiconductor-based planar micro-tube discharger structure is provided, including the steps of forming on a substrate two patterned electrodes separated by a gap and at least one separating block arranged in the gap, forming an insulating layer over the patterned electrodes and the separating block, and filling the insulating layer into the gap. At least two discharge paths are formed. The method can fabricate a plurality of discharge paths in a semiconductor structure, the structure having very high reliability and reusability.

Method for fabricating a planar micro-tube discharger structure

The present invention discloses a semiconductor-based planar micro-tube discharger structure and a method for fabricating the same. The method comprises steps: forming on a substrate two patterned electrodes separated by a gap and at least one separating block arranged in the gap; forming an insulating layer over the patterned electrodes and the separating block and filling the insulating layer into the gap. Thereby are formed at least two discharge paths. The method can fabricate a plurality discharge paths in a semiconductor structure. Therefore, the structure of the present invention has very high reliability and reusability.

Growing community of inventors

Taipei, Taiwan

Ryan Hsin-Chin Jiang