The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2015

Filed:

Dec. 17, 2013
Applicant:

Amazing Microelectronic Corp., New Taipei, TW;

Inventors:

Tung-Yang Chen, Jhubei, TW;

Ming-Dou Ker, Jhu-bei, TW;

Ryan Hsin-Chin Jiang, Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 1/88 (2006.01); H01J 19/42 (2006.01); H01K 1/18 (2006.01); H02H 9/00 (2006.01); H01H 47/00 (2006.01); H05F 3/00 (2006.01); H01J 9/02 (2006.01); H01J 17/06 (2006.01);
U.S. Cl.
CPC ...
H01J 9/02 (2013.01); H01J 17/066 (2013.01);
Abstract

A method for fabricating a semiconductor-based planar micro-tube discharger structure is provided, including the steps of forming on a substrate two patterned electrodes separated by a gap and at least one separating block arranged in the gap, forming an insulating layer over the patterned electrodes and the separating block, and filling the insulating layer into the gap. At least two discharge paths are formed. The method can fabricate a plurality of discharge paths in a semiconductor structure, the structure having very high reliability and reusability.


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