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For the Inventor, By the Inventor

Austin, TX, United States of America

Rode R Mora

USPTO Granted Patents = 12 

Average Co-Inventor Count = 3.8

ph-index = 6

Forward Citations = 63(Granted Patents)


Company Filing History:

goldMedal12 out of 5,491 
 
Freescale Semiconductor,inc.
 patents

Years Active: 2005-2014

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12 patents (USPTO):
1. 8766362 - Shallow trench isolation for SOI structures combining sidewall spacer and bottom liner (2014-07-01),
2. 8513066 - Method of making an inverted-T channel transistor (2013-08-20),
3. 8236638 - Shallow trench isolation for SOI structures combining sidewall spacer and bottom liner (2012-08-07),
4. 7998822 - Semiconductor fabrication process including silicide stringer removal processing (2011-08-16),
5. 7939880 - Split gate non-volatile memory cell (2011-05-10),
6. 7829447 - Semiconductor structure pattern formation (2010-11-09),
7. 7687370 - Method of forming a semiconductor isolation trench (2010-03-30),
8. 7579243 - Split gate memory cell method (2009-08-25),
9. 7528078 - Process of forming electronic device including a densified nitride layer adjacent to an opening within a semiconductor layer (2009-05-05),
10. 7446006 - Semiconductor fabrication process including silicide stringer removal processing (2008-11-04),
11. 7125805 - Method of semiconductor fabrication incorporating disposable spacer into elevated source/drain processing (2006-10-24),
12. 6951783 - Confined spacers for double gate transistor semiconductor fabrication process (2005-10-04),

Title: Innovation and Achievements of Inventor Rode R. Mora

Introduction

Rode R. Mora, based in Austin, TX, is a prolific inventor with a remarkable portfolio of 12 patents to his name. His work primarily revolves around semiconductor technology, demonstrating his expertise and innovative approach in the field. Mora's contributions significantly advance semiconductor device fabrication techniques.

Latest Patents

Among his latest patents, Mora has developed a method for shallow trench isolation for silicon-on-insulator (SOI) structures. This method intricately combines sidewall spacers and bottom liners to enhance semiconductor device performance. The process involves creating a trench within the semiconductor layer, adjacent to a dielectric layer, and strategically forming a stressor layer on the trench's bottom.

Another notable patent reflects his innovation in manufacturing an inverted-T channel transistor. This method includes creating both horizontal and vertical active regions on a substrate with precisely engineered sidewall spacers. It showcases his fundamental understanding of device design and operates to improve the overall efficiency and effectiveness of field effect transistors.

Career Highlights

Rode R. Mora is affiliated with Freescale Semiconductor, Inc., where he continues to drive advancements in semiconductor technology. His extensive career is marked by significant contributions that reflect his deep understanding of electronic fabrication processes. Mora's commitment to innovation positions him as a pivotal figure in the semiconductor industry.

Collaborations

Throughout his career, Mora has collaborated with distinguished colleagues, including Leo Mathew and Toni D. Van Gompel. Their collective expertise fosters an environment of innovation, enhancing their contributions to the field and driving forward the development of cutting-edge technologies.

Conclusion

Rode R. Mora stands out as a brilliant inventor whose innovations in semiconductor technology have paved the way for advancements in the industry. With multiple patents under his belt and valuable collaborations, Mora's work continues to influence the field significantly. His dedication to innovation exemplifies the spirit of invention, inspiring future generations of inventors and engineers.

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