The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2010
Filed:
May. 19, 2006
Leo Mathew, Austin, TX (US);
Rode R. Mora, Austin, TX (US);
Tab A. Stephens, Buda, TX (US);
Tien Ying Luo, Austin, TX (US);
Leo Mathew, Austin, TX (US);
Rode R. Mora, Austin, TX (US);
Tab A. Stephens, Buda, TX (US);
Tien Ying Luo, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
Forming structures such as fins in a semiconductor layer according to a pattern formed by oxidizing a sidewall of a layer of oxidizable material. In one embodiment, source/drain pattern structures and a fin pattern structures are patterned in the oxidizable layer. The fin pattern structure is then masked from an oxidation process that grows oxide on the sidewalls of the channel pattern structure and the top surface of the source/drain pattern structures. The remaining oxidizable material of the channel pattern structure is subsequently removed leaving a hole between two portions of the oxide layer. These two portions are used in one embodiment as a mask for patterning the semiconductor layer to form two fins. This patterning also leaves the source/drain structures connected to the fins.