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For the Inventor, By the Inventor

Garland, TX, United States of America

Robert H Havemann

This inventor holds 79 USPTO granted patents, primarily in Semiconductor Fabrication (CPC class 437 ). Top assignees: Texas Instruments Corporation, Novellus Systems Incorporated, Other. Active years: 1985-2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Robert H Havemann. Retrieved from https://idiyas.com/inventor/robert-h-havemann

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 79

% Patents Active = 96.2

Average Co-Inventor Count = 1.6

ph-index = 25

Forward Citations = 1,948(Granted Patents)

Forward Citations (Not Self Cited) = 1,916(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Plano, TX (US) (1995)
  • Pleasanton, CA (US) (2004 - 2007)
  • Garland, TX (US) (1985 - 2008)
  • San Jose, CA (US) (2004 - 2011)

Company Filing History:

goldMedal71 out of 29,922 
 
Texas Instruments Corporation
 patents
silverMedal7 out of 993 
 
Novellus Systems Incorporated
 patents
bronzeMedal1 out of 834,601 
Other
 patents

Years Active: 1985-2011

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Areas of Expertise:
Nanoparticle Cap Layer
Integrated Circuit
Low Dielectric Constant
Transistor Fabrication
Interconnect Reliability
Polymeric Materials
Metallization Method
Diffusion Barriers
Selective Gap Fill
Multilevel Interconnect
Doped Porous Dielectric
Surface Modified Interconnects
79 patents (USPTO):Explore Patents
1. 8039379 - Nanoparticle cap layer (2011-10-18),
2. 7994640 - Nanoparticle cap layer (2011-08-09),
3. 7368401 - Integrated circuit having a doped porous dielectric and method of manufacturing the same (2008-05-06),
4. 7157798 - Selective refractory metal and nitride capping (2007-01-02),
5. 6995439 - Method of fabricating low dielectric constant dielectric films (2006-02-07),
6. 6873026 - Inhomogeneous materials having physical properties decoupled from desired functions (2005-03-29),
7. 6844258 - Selective refractory metal and nitride capping (2005-01-18),
8. 6753563 - Integrated circuit having a doped porous dielectric and method of manufacturing the same (2004-06-22),
9. 6753250 - Method of fabricating low dielectric constant dielectric films (2004-06-22),
10. 6677188 - Methods for forming a fuse in a semiconductor device (2004-01-13),
11. 6589865 - Low pressure, low temperature, semiconductor gap filling process (2003-07-08),
12. 6566211 - Surface modified interconnects (2003-05-20),
13. 6372596 - Method of making horizontal bipolar transistor with insulated base structure (2002-04-16),
14. 6365451 - Transistor and method (2002-04-02),
15. 6358849 - Integrated circuit interconnect and method (2002-03-19),

Title: The Legacy of Robert H Havemann, the Innovative Mind from Garland, TX

Introduction: Robert H Havemann, a distinguished inventor hailing from Garland, TX, is renowned for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Robert H Havemann holds several patents in the realm of electronics and telecommunications, showcasing his continuous dedication to pushing the boundaries of technological advancement.

Career Highlights: Throughout his illustrious career, Robert H Havemann has worked tirelessly to develop cutting-edge solutions that have revolutionized the industry. His innovative spirit and passion for creating have led to the successful implementation of numerous projects that have left a lasting impact.

Collaborations: Robert H Havemann has collaborated with some of the brightest minds in the industry, fostering a culture of creativity and ingenuity. His ability to work seamlessly in teams has resulted in the development of groundbreaking technologies that have shaped the course of innovation.

Conclusion: In conclusion, Robert H Havemann stands as a beacon of inspiration in the world of invention and innovation. His relentless pursuit of excellence and unwavering commitment to progress continue to inspire generations of inventors and creators worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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