The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2002
Filed:
Mar. 29, 2001
Robert H. Havemann, Garland, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method of fabricating a semiconductor device and the device. The device is fabricated by providing a substrate having a region thereover of electrically conductive material, and a dielectric first sidewall spacer on the region of electrically conductive material. A second sidewall spacer is formed over the first sidewall spacer extending to the substrate from a material which is selectively removal relative to the first sidewall spacer. An electrically conductive region is formed contacting the second sidewall spacer and spaced from the substrate. The second sidewall spacer is selectively removable to form an opening between the substrate and the electrically conductive region. The opening is filled with electrically conductive material to electrically couple the electrically conductive material to the substrate.