Company Filing History:

5 out of 5,671

Globalfoundries Inc.

patents

2 out of 164,108

International Business Machines Corporation

patents

1 out of 12,867

Advanced Micro Devices Corporation

patents

4. 1 out of 927

Globalfoundries U.S. Inc.

patents

where one patent can have more than one assignee

Years Active: 2011-2022

where 'Filed Patents' based on already Granted Patents

7 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 11217678 - Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths and dual raised source drain expitaxial silicon and triple-nitride spacer integration enabling high-voltage EG device on FDSOI (2022-01-04),

2. 10522655 - Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths and dial raised source drain expitaxial silicon and triple-nitride spacer integration enabling high-voltage EG device on FDSOI (2019-12-31),

3. 10347543 - FDSOI semiconductor device with contact enhancement layer and method of manufacturing (2019-07-09),

4. 9806170 - Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths and dual raised source drain expitaxial silicon and triple-nitride spacer integration enabling high-voltage EG device on FDSOI (2017-10-31),

5. 8524591 - Maintaining integrity of a high-K gate stack by passivation using an oxygen plasma (2013-09-03),

6. 8232186 - Methods of integrating reverse eSiGe on NFET and SiGe channel on PFET, and related structure (2012-07-31),

7. 8053306 - PFET with tailored dielectric and related methods and integrated circuit (2011-11-08),

Title: The Innovations of Rick J Carter

Introduction

Rick J Carter is a prominent inventor based in Saratoga Springs, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 7 patents. His work focuses on advanced methods for integrating spacer technologies in electronic devices.

Latest Patents

Carter's latest patents include innovative techniques such as differential SG/EG spacer integration with equivalent NFET/PFET spacer widths. He has developed methods for dual raised source drain epitaxial silicon and triple-nitride spacer integration, which enable high-voltage EG devices on fully depleted silicon-on-insulator (FDSOI) substrates. These patents detail processes for forming matched PFET/NFET spacers with differential widths for SG and EG structures, as well as methods for creating differential width nitride spacers for SG NFET and SG PFET structures. His inventions provide essential advancements in the fabrication of PFET/NFET EG structures and their resulting devices.

Career Highlights

Throughout his career, Rick J Carter has worked with leading technology companies, including GlobalFoundries Inc. and International Business Machines Corporation (IBM). His experience in these organizations has allowed him to refine his expertise in semiconductor manufacturing and device engineering.

Collaborations

Carter has collaborated with notable professionals in the industry, including Peter Baars and George Robert Mulfinger. These partnerships have contributed to the development of innovative solutions in semiconductor technology.

Conclusion

Rick J Carter's contributions to the field of semiconductor technology through his patents and collaborations highlight his role as a key innovator. His work continues to influence advancements in electronic device fabrication.

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