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Richard J Brown

USPTO Granted Patents = 14 (Patent Applications = 2)

Average Co-Inventor Count = 2.1

ph-index = 2

Forward Citations = 35(Granted Patents)

Company Filing History:

6 out of 6

Odyssey Semiconductor, Inc.

Power Integrations, Inc.

patents

Years Active: 2014-2025

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14 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12512312 - Vertical gallium nitride containing field effect transistor with silicon nitride passivation and gate dielectric regions (2025-12-30),

2. 12068161 - Method for implant and anneal for high voltage field effect transistors (2024-08-20),

3. 12062738 - Beryllium doped GaN-based light emitting diode and method (2024-08-13),

4. 12046699 - Beryllium doped GaN-based light emitting diode and method (2024-07-23),

5. 11942537 - Vertical field effect transistor device and method of fabrication (2024-03-26),

6. 11804574 - Streamlined GaN-based fabrication of light emitting diode structures (2023-10-31),

7. 11652165 - Vertical field effect transistor device and method of fabrication (2023-05-16),

8. 11469348 - Beryllium doped GaN-based light emitting diode and method (2022-10-11),

9. 11251295 - Vertical field effect transistor device and method of fabrication (2022-02-15),

10. 11114587 - Streamlined GaN-based fabrication of light emitting diode structures (2021-09-07),

11. 9991360 - Method for forming III-V semiconductor structures including aluminum-silicon nitride passivation (2018-06-05),

12. 9306050 - III-V semiconductor structures including aluminum-silicon nitride passivation (2016-04-05),

13. 9299821 - Gated III-V semiconductor structure and method (2016-03-29),

14. 8791034 - Chemical vapor deposition process for aluminum silicon nitride (2014-07-29),

Title: Richard J Brown: Innovator in Semiconductor Technology

Introduction

Richard J Brown is a prominent inventor based in Ithaca, NY (US), known for his significant contributions to semiconductor technology. With a total of 14 patents to his name, he has made remarkable advancements in the field, particularly in high voltage field effect transistors and light-emitting diodes.

Latest Patents

One of his latest patents is a method for implanting and annealing high voltage field effect transistors. This invention provides a method of forming a semiconductor device on a gallium and nitrogen-containing material. The process involves providing a substrate member with a surface region made of gallium and nitrogen-bearing material. It also includes electrically activating the implant profile while removing crystalline damage from the epitaxial material, transforming the amorphous state into a single crystalline state, thus creating a substantially electrically activated crystalline material.

Another notable patent is for a beryllium-doped GaN-based light-emitting diode and method. This invention offers a method and apparatus for incorporating beryllium, followed by activation to achieve p-type materials with lower resistivity than magnesium. The result is a higher efficiency GaN-based LED with improved current handling capability, leading to a brighter device of the same area.

Career Highlights

Throughout his career, Richard has worked with notable organizations such as Odyssey Semiconductor, Inc. and Cornell University. His work has significantly impacted the development of advanced semiconductor devices, enhancing their performance and efficiency.

Collaborations

Richard has collaborated with esteemed colleagues, including James R Shealy and Christopher M Martin, contributing to various innovative projects in the semiconductor field.

Conclusion

Richard J Brown's contributions to semiconductor technology through his patents and collaborations have established him as a key figure in the industry. His innovative methods continue to influence the development of more efficient electronic devices.

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