The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2024

Filed:

Oct. 07, 2022
Applicant:

Power Integrations, Inc., San Jose, CA (US);

Inventors:

James R. Shealy, Ithaca, NY (US);

Richard J. Brown, Ithaca, NY (US);

Assignee:

POWER INTEGRATIONS, INC., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/265 (2006.01); H01L 29/04 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/26553 (2013.01); H01L 29/04 (2013.01); H01L 29/66204 (2013.01);
Abstract

In an example, the present invention provides a method of forming a semiconductor device on a gallium and nitrogen containing material. The method includes providing a substrate member comprising a surface region, the substrate member comprising a gallium and nitrogen bearing material. The method includes causing an implanted species to electrically activate the implant profile while removing one or more crystalline damage from the epitaxial material to change the amorphous state to a single crystalline state, and thereby creating a substantially electrically activated crystalline material.


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