The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2018
Filed:
Jun. 28, 2010
Applicants:
James R. Shealy, Ithaca, NY (US);
Richard Brown, Ithaca, NY (US);
Inventors:
James R. Shealy, Ithaca, NY (US);
Richard Brown, Ithaca, NY (US);
Assignee:
CORNELL UNIVERSITY, Ithaca, NY (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/318 (2006.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01); A61K 38/48 (2006.01); C12N 9/64 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H01L 29/423 (2006.01); A61K 38/00 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66462 (2013.01); A61K 38/4846 (2013.01); C12N 9/644 (2013.01); C12N 9/6437 (2013.01); C12Y 304/21021 (2013.01); C12Y 304/21022 (2013.01); H01L 21/02145 (2013.01); H01L 21/02271 (2013.01); H01L 21/318 (2013.01); H01L 23/291 (2013.01); H01L 23/3171 (2013.01); H01L 29/2003 (2013.01); H01L 29/42316 (2013.01); H01L 29/7786 (2013.01); H01L 29/7787 (2013.01); A61K 38/00 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A method for fabricating a semiconductor structure includes forming a semiconductor layer over a substrate and forming an aluminum-silicon nitride layer upon the semiconductor layer. When the semiconductor layer in particular comprises a III-V semiconductor material such as a group III nitride semiconductor material or a gallium nitride semiconductor material, the aluminum-silicon nitride material provides a superior passivation in comparison with a silicon nitride material.