The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2016
Filed:
Jun. 28, 2010
Applicants:
James R. Shealy, Ithaca, NY (US);
Richard Brown, Ithaca, NY (US);
Inventors:
James R. Shealy, Ithaca, NY (US);
Richard Brown, Ithaca, NY (US);
Assignee:
CORNELL UNIVERSITY, Ithaca, NY (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 23/291 (2013.01); H01L 23/3171 (2013.01); H01L 29/42316 (2013.01); H01L 29/66462 (2013.01); H01L 29/2003 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A semiconductor structure includes a semiconductor layer that is passivated with an aluminum-silicon nitride layer. When the semiconductor layer in particular comprises a III-V semiconductor material such as a group III nitride semiconductor material or a gallium nitride semiconductor material, the aluminum-silicon nitride material provides a superior passivation in comparison with a silicon nitride material.