The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2024
Filed:
Sep. 14, 2022
Applicant:
Power Integrations, Inc., San Jose, CA (US);
Inventors:
James R. Shealy, Ithaca, NY (US);
Richard J. Brown, Ithaca, NY (US);
Assignee:
POWER INTEGRATIONS, INC., San Jose, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/14 (2010.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/12 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/145 (2013.01); H01L 33/0025 (2013.01); H01L 33/007 (2013.01); H01L 33/0095 (2013.01); H01L 33/06 (2013.01); H01L 33/12 (2013.01); H01L 33/325 (2013.01);
Abstract
The invention described herein provides a method and apparatus to realize incorporation of Beryllium followed by activation to realize p-type materials of lower resistivity than is possible with Magnesium. Lower contact resistances and more effective electron confinement results from the higher hole concentrations made possible with this invention. The result is a higher efficiency GaN-based LED with higher current handling capability resulting in a brighter device of the same area.