Santa Clara, CA, United States of America

Rashid Bashir

This inventor holds 24 USPTO granted patents, primarily in Semiconductor Technology. Top assignees: National Semiconductor Corporation, National Semiconductor Corportaion. Active years: 1995-2002.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Rashid Bashir. Retrieved from https://idiyas.com/inventor/rashid-bashir-4sexpm5d

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 24

% Patents Active = 100.0

Average Co-Inventor Count = 2.1

ph-index = 14

Forward Citations = 657(Granted Patents)

Location History:

Santa Clara, CA (US) (1995 - 2000)
Mountain View, CA (US) (2000 - 2002)
Lafayette, IN (US) (2002)

Company Filing History:

23 out of 4,791

National Semiconductor Corporation

patents

1 out of 2

National Semiconductor Corportaion

patents

Years Active: 1995-2002

Loading Chart...

Areas of Expertise:

Trench Isolation

Bipolar Transistors

Micro-Machined Sensors

Polysilicon Bias

Epitaxial Layers

Silicon Surface

High Voltage Devices

Acoustic Transducers

Field Oxide Isolation

Self-Aligned Contacts

Anisotropic Etch Process

Heterojunction Technology

24 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6362064 - Elimination of walkout in high voltage trench isolated devices (2002-03-26),

2. 6346452 - Method for controlling an N-type dopant concentration depth profile in bipolar transistor epitaxial layers (2002-02-12),

3. 6121148 - Semiconductor device trench isolation structure with polysilicon bias (2000-09-19),

4. 6051446 - Thin liquid crystal transducer pixel cell having self-aligned support (2000-04-18),

5. 6012335 - High sensitivity micro-machined pressure sensors and acoustic transducers (2000-01-11),

6. 5952706 - Semiconductor integrated circuit having a lateral bipolar transistor (1999-09-14),

7. 5930635 - Complementary Si/SiGe heterojunction bipolar technology (1999-07-27),

8. 5914523 - Semiconductor device trench isolation structure with polysilicon bias (1999-06-22),

9. 5888845 - Method of making high sensitivity micro-machined pressure sensors and (1999-03-30),

10. 5856239 - Tungsten silicide/ tungsten polycide anisotropic dry etch process (1999-01-05),

11. 5827762 - Method for forming buried interconnect structue having stability at high (1998-10-27),

12. 5811315 - Method of forming and planarizing deep isolation trenches in a (1998-09-22),

13. 5780343 - Method of producing high quality silicon surface for selective epitaxial (1998-07-14),

14. 5773350 - Method for forming a self-aligned bipolar junction transistor with (1998-06-30),

15. 5747353 - Method of making surface micro-machined accelerometer using (1998-05-05),

Title: Innovator in Semiconductor Technology: Rashid Bashir

Introduction: Rashid Bashir, based in Santa Clara, CA, is a prominent inventor with a remarkable portfolio showcasing a total of 24 patents. His inventions primarily focus on advancements in semiconductor technologies, particularly related to high voltage trench isolated devices and bipolar transistors. His innovative solutions reflect a deep understanding of material science and engineering.

Latest Patents: Among Rashid Bashir's latest notable patents is the method for the elimination of walkout in high voltage trench isolated devices. This inventive approach involves applying a voltage bias signal directly to the epitaxial silicon surrounding the device, which elevates the initial breakdown voltage and effectively eliminates walkout. Furthermore, he holds a patent on a technique for controlling the N-type dopant concentration depth profile in bipolar transistor epitaxial layers. This process enables the precise formation of epitaxial layers with tailored n-type dopant concentration depth profiles, significantly enhancing the performance of NPN bipolar transistors.

Career Highlights: Rashid has made significant contributions to the semiconductor industry through his tenure at National Semiconductor Corporation. His work in this prominent company has led to numerous innovative solutions that have propelled advancements in semiconductor technology and solidified his reputation as an expert in the field.

Collaborations: During his career, Rashid Bashir has collaborated with esteemed colleagues, including Francois Hebert and Datong Chen. Their collaborative efforts have likely fostered an environment of innovation and creativity, further enhancing the quality and impact of their work.

Conclusion: Rashid Bashir's contributions to semiconductor technology exemplify the essence of innovation in the industry. With his extensive patent portfolio and collaborative spirit, he continues to push the boundaries of what is possible in the realm of electronics. His work not only advances technological capacities but also inspires future generations of inventors and engineers.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]