The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 1999
Filed:
May. 02, 1997
Applicant:
Inventors:
Rashid Bashir, Santa Clara, CA (US);
Francois Hebert, Sunnyvale, CA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438313 ; 438309 ;
Abstract
A method of manufacturing truly complementary bipolar transistors on a common substrate. The method results in the fabrication of vertical NPN and PNP transistors which have an identical structure and mode of operation, with both devices operating in the downward direction. The inventive method permits independent control of the characteristics of the two devices, producing a closely matched performance for both devices.