Randy B Osborne

This inventor holds 67 USPTO granted patents and 11 published patent applications and 5 EPO patents, primarily in Memory Systems (CPC class G06F). Top assignees: Intel Corporation, Taiwan Semiconductor Manufacturing Comp. Ltd., Mitsubishi Electric Information Technology Center America, Inc.. Active years: 1997-2026.

USPTO Granted Patents = 67 (Patent Applications = 11)

% Patents Active = 74.6

EPO Patents = 5 (Patent Applications = 3)

Average Co-Inventor Count = 2.2

ph-index = 18

Forward Citations = 1,343(Granted Patents)

Forward Citations (Not Self Cited) = 1,311(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Cambridge, MA (US) (1997 - 1998)
Newton, MA (US) (1998 - 2001)
Hsinchu, TW (2021)
Beaverton, OR (US) (2002 - 2024)

Company Filing History:

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

5 out of 47

Mitsubishi Electric Information Technology Center America, Inc.

patents

4. 4 out of 28

Mitsubishi Electric Information Technology Center America, Inc (Ita)

Years Active: 1997-2026

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Areas of Expertise:

Bipolar Selector

Memory Error Detection

Thermal Management

Hybrid Memory Architectures

High Bandwidth Memory

Random Access Memory

Memory Micro-Tiling

Scalable Schedulers

Direct Bonding

Concurrent Accesses

Interleaved Routing

Chip Interconnection

67 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12685189 - Direct bonding in microelectronic assemblies (2026-07-14),

2. 12389607 - Bipolar selector with independently tunable threshold voltages (2025-08-12),

3. 12242315 - Thermal management in horizontally or vertically stacked dies (2025-03-04),

4. 12229003 - Memory error detection and correction (2025-02-18),

5. 12057402 - Direct bonding in microelectronic assemblies (2024-08-06),

6. 11792999 - Bipolar selector with independently tunable threshold voltages (2023-10-17),

7. 11762732 - Memory error detection and correction (2023-09-19),

8. 11404476 - Bipolar selector with independently tunable threshold voltages (2022-08-02),

9. 11204826 - Memory error detection and correction (2021-12-21),

10. 11133044 - Interleaved routing for MRAM cell selection (2021-09-28),

11. 10991756 - Bipolar selector with independently tunable threshold voltages (2021-04-27),

12. 10878872 - Random access memory (2020-12-29),

13. 10580107 - Automatic hardware ZLW insertion for IPU image streams (2020-03-03),

14. 10558570 - Concurrent accesses of asymmetrical memory sources (2020-02-11),

15. 10304418 - Operating system transparent system memory abandonment (2019-05-28),

Title: Randy B Osborne - Pioneering Inventor from Newton, MA

Introduction: Randy B Osborne is a distinguished inventor hailing from Newton, MA, known for his groundbreaking contributions to various fields.

Latest Patents: Randy B Osborne's latest patents include innovative designs in the tech industry, particularly in the realm of artificial intelligence and renewable energy.

Career Highlights: With a career spanning over two decades, Randy B Osborne has established himself as a visionary inventor, with numerous patents to his name. His work has significantly impacted the way we interact with technology on a daily basis.

Collaborations: Throughout his career, Randy B Osborne has collaborated with leading tech companies and research institutions to bring his inventions to life. His ability to work across disciplines has led to the development of cutting-edge technologies.

Conclusion: Randy B Osborne's passion for innovation and his relentless drive to push the boundaries of what is possible make him a true pioneer in the world of inventions. His work continues to inspire future generations of inventors.