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For the Inventor, By the Inventor

San Jose, CA, United States of America

Ramin Ghodsi

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This inventor holds 77 USPTO granted patents and 1 published patent application and 1 EPO patent, primarily in Memory Device Architecture (CPC class G11C). Top assignees: Micron Technology Incorporated, Intel Corporation, Round Rock Research, LLC. Active years: 2002-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ramin Ghodsi. Retrieved from https://idiyas.com/inventor/ramin-ghodsi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 77 

% Patents Active = 93.5

 

Average Co-Inventor Count = 1.7

ph-index = 11

Forward Citations = 360(Granted Patents)

Forward Citations (Not Self Cited) = 297(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Cupertino, CA (US) (2002 - 2016)
  • San Jose, CA (US) (2015 - 2024)

Company Filing History:

goldMedal72 out of 39,253 
 
Micron Technology Incorporated
 patents
silverMedal3 out of 56,365 
 
Intel Corporation
 patents
bronzeMedal2 out of 428 
 
Round Rock Research, LLC
 patents

Years Active: 2002-2026

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Areas of Expertise:
Content Addressable Memory
Memory Device Architecture
Data States
I/O Buffer
Read Margin
Erasable Block Segmentation
Non-Volatile Memory
Programming Pulses
Threshold Voltage
Data Management
Read Disturb
SGS Lines
77 patents (USPTO):Explore Patents
1. 12700448 - Memory device architecture using multiple physical cells per bit to improve read margin and to alleviate the need for managing demarcation read voltages (2026-08-04),
2. 12142334 - Health scan for content addressable memory (2024-11-12),
3. 12020743 - Memory device architecture using multiple physical cells per bit to improve read margin and to alleviate the need for managing demarcation read voltages (2024-06-25),
4. 11749349 - I/O buffer offset mitigation (2023-09-05),
5. 11605418 - Memory device architecture using multiple physical cells per bit to improve read margin and to alleviate the need for managing demarcation read voltages (2023-03-14),
6. 11568940 - Apparatus for determining data states of memory cells (2023-01-31),
7. 11508447 - Memories for determining data states of memory cells (2022-11-22),
8. 11410730 - I/O buffer offset mitigation while applying a same voltage level to two inputs of an input buffer (2022-08-09),
9. 11210011 - Memory system data management (2021-12-28),
10. 11145370 - Apparatuses and methods for segmented SGS lines (2021-10-12),
11. 11107536 - Apparatus for determining data states of memory cells (2021-08-31),
12. 11056201 - Apparatus for determining data states of memory cells (2021-07-06),
13. 10854303 - Apparatus and methods for determining data states of memory cells (2020-12-01),
14. 10854301 - Apparatuses and methods for reducing read disturb (2020-12-01),
15. 10854295 - I/O buffer offset mitigation (2020-12-01),

Title: Ramin Ghodsi: Innovator in Memory Device Technology

Introduction:

Ramin Ghodsi is a notable inventor based in San Jose, CA, renowned for his extensive contributions to the field of memory device technology. With an impressive portfolio of 76 patents, Ghodsi has made significant advancements that are shaping the future of data storage and processing.

Latest Patents:

His latest patents include innovative designs such as a health scan for content addressable memory. This memory device features a content addressable memory (CAM) block that stores multiple search keys. The device incorporates control logic that calculates and stores parity values to detect errors in memory cells, enhancing reliability.

Additionally, Ghodsi has developed a memory device architecture using multiple physical cells per bit to improve read margin and simplify the management of demarcation read voltages. This architecture permits the combination of two physical memory cells into one logical bit, facilitating current path creation for differential signal detection.

Career Highlights:

Ghodsi's career has been marked by substantial roles at leading tech companies. He has worked at Micron Technology Incorporated and Intel Corporation, where he developed groundbreaking memory technologies that have propelled advancements in the semiconductor industry.

Collaborations:

Throughout his career, Ghodsi has collaborated with talented professionals like Qiang Tang and Feng Q Pan. These partnerships have fostered a creative environment that has led to innovative approaches in memory technology.

Conclusion:

Ramin Ghodsi's work in memory device technology exemplifies the spirit of innovation and dedication to improving data storage solutions. His contributions through numerous patents highlight his role as a driving force in the tech industry, paving the way for future advancements in memory devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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