The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 06, 2021

Filed:

Nov. 11, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Tommaso Vali, Sezze, IT;

Ramin Ghodsi, San Jose, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/34 (2006.01); G11C 16/26 (2006.01); G11C 16/08 (2006.01); G11C 16/32 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3431 (2013.01); G11C 16/08 (2013.01); G11C 16/26 (2013.01); G11C 16/0483 (2013.01); G11C 16/32 (2013.01);
Abstract

Memory might include a plurality of strings of memory cells, a plurality of access lines each connected to the strings of memory cells, and a controller configured to cause the memory to increase a voltage level applied to each of the access lines, determine a particular voltage level at which each memory cell of a first set of strings of memory cells is deemed to be activated while increasing the voltage level applied to the access lines, decrease the voltage level applied to a particular access line without decreasing the voltage level applied to each remaining access line, and, for each memory cell connected to the particular access line and contained in a second set of strings of memory cells, determine whether that memory cell is deemed to be activated while applying the particular voltage level to the particular access line.


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