The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 01, 2020

Filed:

Jun. 23, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Tommaso Vali, Sezze, IT;

Ramin Ghodsi, San Jose, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/34 (2006.01); G11C 16/26 (2006.01); G11C 16/08 (2006.01); G11C 16/32 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3431 (2013.01); G11C 16/08 (2013.01); G11C 16/26 (2013.01); G11C 16/0483 (2013.01); G11C 16/32 (2013.01);
Abstract

Methods of operating a memory, as well as memory configured to perform such methods, might include determining a plurality of read voltages for a read operation during a precharge phase of the read operation, determining a pass voltage for the read operation during the precharge phase of the read operation, applying the pass voltage to each unselected access line of a plurality of access lines, and, for each read voltage of the plurality of read voltages, applying that read voltage to a selected access line of the plurality of access lines and sensing a data state of a memory cell connected to the selected access line.


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