Company Filing History:

15 out of 12,913

Advanced Micro Devices Corporation

Redfern Integrated Optics, Inc.

patents

Years Active: 1996-2013

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17 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8358889 - Device fabrication with planar bragg gratings suppressing parasitic effects (2013-01-22),

2. 6211022 - Field leakage by using a thin layer of nitride deposited by chemical vapor deposition (2001-04-03),

3. 6071784 - Annealing of silicon oxynitride and silicon nitride films to eliminate (2000-06-06),

4. 6064105 - Data retention of EEPROM cell with shallow trench isolation using (2000-05-16),

5. 5959336 - Decoder circuit with short channel depletion transistors (1999-09-28),

6. 5942780 - Integrated circuit having, and process providing, different oxide layer (1999-08-24),

7. 5908308 - Use of borophosphorous tetraethyl orthosilicate (BPTEOS) to improve (1999-06-01),

8. 5854114 - Data retention of EEPROM cell with shallow trench isolation using (1998-12-29),

9. 5841701 - Method of charging and discharging floating gage transistors to reduce (1998-11-24),

10. 5830795 - Simplified masking process for programmable logic device manufacture (1998-11-03),

11. 5761116 - V.sub.pp only scalable EEPROM memory cell having transistors with thin (1998-06-02),

12. 5700698 - Method for screening non-volatile memory and programmable logic devices (1997-12-23),

13. 5672521 - Method of forming multiple gate oxide thicknesses on a wafer substrate (1997-09-30),

14. 5646901 - CMOS memory cell with tunneling during program and erase through the (1997-07-08),

15. 5615150 - Control gate-addressed CMOS non-volatile cell that programs through (1997-03-25),

Title: Radu M Barsan: Innovator in Photonic Device Fabrication

Introduction

Radu M Barsan is a prominent inventor based in Cupertino, CA, known for his significant contributions to the field of photonic device fabrication. With a total of 17 patents to his name, Barsan has made remarkable advancements in technology that enhance the performance and reliability of optical devices.

Latest Patents

One of Barsan's latest patents focuses on "Device fabrication with planar Bragg gratings suppressing parasitic effects." This invention relates to various methods of fabricating Planar Bragg Gratings (PBG) in a doped waveguide within a Planar Lightwave Circuit (PLC) device. The methods aim to suppress unwanted parasitic grating effects during the fabrication process. One approach involves using a hard mask before waveguide photolithography and etching, resulting in a steeper sidewall angle that reduces or eliminates parasitic grating effects. Another method includes depositing a layer of developable Bottom Anti Reflective Coating (BARC) prior to applying the photo resist for waveguide etching. Additionally, Barsan's work includes a method of using a planarizing undoped silica layer as a barrier layer on top of the core, which improves lateral uniformity by smoothing out sidewall roughness created during the etching process.

Another significant patent addresses "Field leakage by using a thin layer of nitride deposited by chemical vapor deposition." In this invention, a nitride layer is deposited over a field oxide layer that separates transistors formed in a substrate. This nitride layer effectively decreases transistor current leakage by blocking the penetration of positive ions such as H+ and Na+ into the field oxide layer. This innovation is particularly beneficial when high transistor threshold voltages, such as 12 volts or more, are desired, as it significantly reduces current leakage.

Career Highlights

Throughout his career, Radu M Barsan has worked with notable companies, including Advanced Micro Devices Corporation and Vantis Corporation. His experience in these organizations has contributed to his expertise in the field of photonics and semiconductor technology.

Collaborations

Barsan has collaborated with several professionals in his field, including Sunil D Mehta and Jonathan Lin. These collaborations have further enriched his work and contributed to the development of innovative solutions in photonic device fabrication.

Conclusion

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