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Cupertino, CA, United States of America

Radu M Barsan

USPTO Granted Patents = 17

Average Co-Inventor Count = 2.3

ph-index = 10

Forward Citations = 345(Granted Patents)

Location History:

Cupertino, CA (US) (1996 - 1999)
Saratoga, CA (US) (1998 - 2013)

Company Filing History:

15 out of 12,881

Advanced Micro Devices Corporation

Vantis Corporation

Redfern Integrated Optics, Inc.

Years Active: 1996-2013

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17 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8358889 - Device fabrication with planar bragg gratings suppressing parasitic effects (2013-01-22),

2. 6211022 - Field leakage by using a thin layer of nitride deposited by chemical vapor deposition (2001-04-03),

3. 6071784 - Annealing of silicon oxynitride and silicon nitride films to eliminate (2000-06-06),

4. 6064105 - Data retention of EEPROM cell with shallow trench isolation using (2000-05-16),

5. 5959336 - Decoder circuit with short channel depletion transistors (1999-09-28),

6. 5942780 - Integrated circuit having, and process providing, different oxide layer (1999-08-24),

7. 5908308 - Use of borophosphorous tetraethyl orthosilicate (BPTEOS) to improve (1999-06-01),

8. 5854114 - Data retention of EEPROM cell with shallow trench isolation using (1998-12-29),

9. 5841701 - Method of charging and discharging floating gage transistors to reduce (1998-11-24),

10. 5830795 - Simplified masking process for programmable logic device manufacture (1998-11-03),

11. 5761116 - V.sub.pp only scalable EEPROM memory cell having transistors with thin (1998-06-02),

12. 5700698 - Method for screening non-volatile memory and programmable logic devices (1997-12-23),

13. 5672521 - Method of forming multiple gate oxide thicknesses on a wafer substrate (1997-09-30),

14. 5646901 - CMOS memory cell with tunneling during program and erase through the (1997-07-08),

15. 5615150 - Control gate-addressed CMOS non-volatile cell that programs through (1997-03-25),

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