The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 1997
Filed:
Nov. 21, 1995
Applicant:
Inventors:
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 24 ; 437 43 ; 148D / ; 148D / ;
Abstract
An integrated circuit device and manufacturing process wherein a first region is formed in a substrate with a dopant that enhances oxide formation and a second region is formed in the substrate with a dose of nitrogen that retards oxide formation. An oxide layer is grown over the first and the second regions and over a third region of the substrate such that the first, second, and third regions yield differing thicknesses of the oxide layer.
Barsan, Radu. (1997). Method of forming multiple gate oxide thicknesses on a wafer substrate (U.S. Patent No. 5672521). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5672521
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile